BC808 discrete semiconductors r dc components co., ltd. technical specifications of pnp epitaxial planar transistor description designed for use in drive and output stages of audio amplifiers. pinning 1 = base 2 = emitter 3 = collector .091(2.30).067(1.70) sot-23 dimensions in inches and (millimeters) .063(1.60).055(1.40) .108(0.65).089(0.25) .045(1.15).034(0.85) .118(3.00) .110(2.80) .020(0.50).012(0.30) .0043(0.11) .0035(0.09) .004 (0.10) .051(1.30).035(0.90) .026(0.65).010(0.25) max .027(0.67).013(0.32) 2 1 3 characteristic symbol rating unit collector-emitter voltage vces -30 v vceo -25 v emitter-base voltage vebo -5 v collector current ic -500 ma total power dissipation pd 225 mw junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-emitter breakdown voltage bvces -30 - - v ic=-10ma bvceo -25 - - v ic=-10ma emitter-base breakdown volatge bvebo -5 - - v ie=-1ma collector cutoff current icbo - - -0.1 ma vcb =-20v emitter cutoff current iebo - - -0.1 ma veb =-4v collector-emitter saturation voltage (1) vce(sat) - - -0.7 v ic=-500ma, ib=-50ma base-emitter on voltage vbe(on) - - -1.2 v ic=-300ma, vce =-1v dc current gain(1) hfe 100 - 600 - ic=-100ma, vce=-1v transition frequency ft - 100 - mhz ic=-10ma, vce =-5v, f=100mhz output capacitance cob - - 8 pf vcb =-10v, f=1mhz, ie=0 electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2% rank 16 25 40 range 100~250 160~400 250~600 classification of hfe
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